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Fundamental and Frequency Multiplied DRO

Dielectric Resonant Oscillator

Fundamental DROs

Multiplied DROs

Configuration and Assembly

Electrical Testing and Verification

Information

                            

Fundamental Dielectric Resonant Oscillators

Part Number

Center

Frequency

 GHz

Output

Power (dBm)

Tuning

Voltage

Volts

Electrical

Tuning

MHz

Typical

Phase Noise

@100KHz

VSWR

:1

DC Current

mADC @12V

ND5P05F

5

5

2-18

2.0

-110

2

120

ND6P05F

6

5

2-18

2.4

-109

2

120

ND7P05F

7

5

2-18

2.8

-108

2

120

ND8P05F

8

5

2-18

3.2

-107

2

120

ND9P05F

9

5

2-18

3.6

-106

2

120

ND10P05F

10

5

2-18

4.0

-105

2

120

ND11P05F

11

5

2-18

4.4

-104

2

120

ND12P05F

12

5

2-18

4.8

-103

2

120

ND13P05F

13

5

2-18

5.2

-102

2

120

ND14P05F

14

5

2-18

5.6

-101

2

120

ND15P05F

15

5

2-18

6.0

-100

2

120

ND16P05F

16

5

2-18

6.4

-100

2

120

 

Multiplied Dielectric Resonant Oscillators

Part Number

Center

Frequency

 GHz

Output

Power (dBm)

Tuning

Voltage

Volts

Electrical

Tuning

MHz

Typical

Phase Noise

@1MHz

VSWR

:1

DC Current

mADC @12V

ND18P10M

18

10

2-18

10.4

-113

2

200

ND20P10M

20

10

2-18

10.8

-112

2

200

ND22P10M

22

10

2-18

11.2

-111

2

200

ND24P10M

24

10

2-18

11.6

-110

2

200

ND26P10M

26

10

2-18

12.0

-109

2

200

ND28P10M

28

10

2-18

12.4

-108

2

200

ND30P10M

30

10

2-18

16.8

-107

2

300

ND32P10M

32

10

2-18

17.2

-107

2

300

ND36P10M

36

10

2-18

17.6

-106

2

400

ND40P10M

40

10

2-18

18

-105

2

400

ND48P10M

48

10

2-18

18

-103

2.5

400

ND60P10M

60

10

2-18

18

-100

2.5

400

ND72P10M

72

10

2-18

25

-100

2.5

600

ND88P5M

88

5

2-18

35

-97

2.7

600

ND104P0M

104

0

2-18

45

-95

2.7

600

 

DC Regulators and output buffer amps minimize pushing & pulling effects.
Waveguide Outputs available on units >18 GHz

 

Configuration and Assembly

Norden VCO and DRO assemblies are built using high precision thin film alumina micro circuitry with PHEMT GaAs MESFET MMIC and individual silicon devices as the active components. Assemblies use both high temperature die attach and epoxy mount. Interconnection of the components is completed with either gold wire or ribbon bonding. Sample destruct testing is performed on both attachment and bonding to insure compliance to the manufacturing process. Final assembly is within an epoxy sealed machined package (or hermetically laser sealed depending on the customer needs).

Electrical Testing and Verification

Each individual unit is tested to insure compliance to the electrical specifications over the required environmental conditions.  A burn in of the unit is completed prior to final testing and shipping to insure product integrity.  A test sheet for the unit is completed verifying testing and the associated results.

Process evaluation and verification of any new design implementation is performed using a detailed environmental test matrix that stresses the new design to insure integrity.  Implementation of new active or control devices requires a minimum 1000 hours operating burn in at the maximum operating temperature of those devices.

Information

For additional questions and clarification contact sales@nordengroup.com

 

 

 
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Copyright © 2005 Norden Millimeter
Last modified: 08/02/07
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